Witryna負載效應（loading effect）可以分為3種：巨觀負載效應（macroloading）、微觀負載效應（microloading）以及與與刻蝕深寬比相關的負載效應（aspect ratio dependent etching，ARDE）三種效應圖解說明如圖1所示。所謂巨觀負載效應，是因刻蝕總面積的增加而導致的整體刻蝕速率下降，如圖1（a）所示。 Witrynaminimize the macro-loading effect. Experimental: A 5.0 mm thick fused silica wafer 50.0 mm in diameter was used as our substrate. A chrome-on- ... In addition to influencing etching uniformity, the chamber pressure also affects the etching rate and profile. From Figure 3, it is clear that the etching rate increases with the chamber pressure. ...

Selective etching of silicon nitride over silicon oxide using ClF

WitrynaThe dependence of etch rate on the quantity of material being etched, often referred to as the loading effect, for plasma etching is analyzed quantitatively with the aid of some simplifying assumptions. The etch rate is related to the quantity of material being etched through three phenomenological parametersβ, τ, and , which are related to the affinity … WitrynaIn addition, loading effects in Si etching are experimentally investigated. In Sect. 3, the etching-limiting step and the origin of the loading effect are discussed. To verify the … plant based diet reverse hypothyroidism

Macro-loading Effects in Inductively Coupled Plasma Etched …

Witryna半導体用語集. ローディング効果. 英語表記：loading effect エッチング速度がエッチング面積依存性を示し、一般にエッチング面積が増加するほどエッチング速度が低下する現象。 WitrynaEtch rate affected by gas pressure and loading effect. Plasma density. RF power + inductively coupled power. An optimal pressure exists for maximum etching rate. However, in reality, etching rate is not the only issue. For example, if anisotropy is the most important factor, one should use lower pressure. WitrynaLoading Effect. The loading effect is a phenomenon in which the etch rate change depending on Si aperture (unmasked area) ratios. On the surface of Si, the fluorine … plant based diet soup recipes